硅片行业术语大全(中英文对照 A-H)

rgsmdqy

硅片行业术语大全(中英文对照 A-H)
7 i. R0 d' P( c3 N3 B: G
% v% f1 G( \* y! mAcceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
; z) d* S- n/ n- u$ f受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
Alignment Precision - Displacement of patterns that occurs during the photolithography process.
% p( q# Q' Y( n" U套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
. h( a6 Z/ v6 R; w. {Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
7 [) v5 L3 @8 o4 @6 U+ y$ y椭圆方位角 - 测量入射面和主晶轴之间的角度。
Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
! G$ O$ s3 k+ W背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
9 a4 w1 z6 v! R6 EBipolar - Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the bonding of two wafers occurs.
绑定面 - 两个晶圆片结合的接触区。
Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
6 a5 b$ }' h3 x埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
5 C& W0 `5 ~( R" A  H8 OCarrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
% n* J2 u" N6 l1 T. S/ [) F' f- Z载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
& v7 e. ^& v. ]' Z化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
) P$ z! x3 [- L" t, XChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
$ ]) _: y* r% X- B卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
0 {) ~. T& `" d+ v  oCleavage Plane - A fracture plane that is preferred.
# k5 `5 V; D) {) I1 e0 I. n$ J解理面 - 破裂面
  h1 Y0 U) I2 F8 @/ X- {Crack - A mark found on a wafer that is greater than 0.25 mm in length.
, Z2 Z6 p6 z, C裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
4 L# T# c. X1 S; R: p# W# j* jCrater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
% c. S3 v3 ]: f$ E7 WConductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
' u5 M8 p" ]4 `$ p/ B% D传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
# t$ s2 y! y% g$ }5 q- Y0 o导电类型 - 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
: B5 h! C* c  t% iContamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
' }2 [* p% n+ y+ y沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
9 m8 D, x) z1 a9 \( l晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
; u8 C% B$ ?5 d  l/ o' }5 LCrystal Indices (see Miller indices)
晶体指数 （参见米勒指数）
Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
Dimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
! V4 _6 k( e& D: }1 x& Q. o表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
) ~; u0 o, J; i" x施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
+ a  S0 f: o3 S4 z' L搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
Doping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
9 F, @+ Y- _  W5 G4 W% p# nEdge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
" m& }$ {2 s% c. c, a% A芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
Edge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
3 R; u$ e+ N. K6 A/ T* H9 e9 y% i- ]边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
; Z. K. n; _  T( n( p! b名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
' w' z$ E5 b; i0 c6 j/ D% PEdge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
& T' z7 B" I- f  y- T5 R" fEtch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
0 P$ E7 w6 A1 \3 M7 a" W蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
! A5 e  {, K6 t2 M% _, `) tFixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
7 s" F/ D  o' V平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
四探针 - 测量半导体晶片表面电阻的设备。
Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
4 e/ F9 Q8 l& }# D! x$ B- _正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
$ b" \% O6 `5 `$ A& OGoniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。
: S- H2 }+ }/ J; \. M5 d, nGradient, Resistivity (not preferred; see resistivity variation)
7 g: }( m) y4 D电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
0 ~2 R2 I4 i) a( T8 ^' t凹槽 - 没有被完全清除的擦伤。
. s- h/ I  j% ]0 pHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
; L6 F( u' x; x$ v0 g6 b) d! a$ B手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
" d4 Q3 V6 ]6 g% OHole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
& \# p' }/ R! Y& `! w& f硅片行业术语大全(中英文对照 I-Z)

1 |" C/ f. \- m8 ^7 ^' P- _- e4 ~) cIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
, E9 T1 c' c1 Y6 v- C* Y' y晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
2 o* u( O9 \- v0 u. W& OLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
$ @# p6 q0 v; ZLay - The main direction of surface texture on a wafer.
6 {6 k4 n4 G% O; C# |( y层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
% ?1 p9 D" K; d光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
- U) U% O1 p: ]! R8 HLithography - The process used to transfer patterns onto wafers.
7 L% X  t; y0 i/ D4 N- i光刻 - 从掩膜到圆片转移的过程。
4 A1 p4 J# w1 j  O3 {' @Localized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
  ]$ t/ |" S5 r/ Y! e1 u局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
; X1 S' |5 A% Y# V' QLot - Wafers of similar sizes and characteristics placed together in a shipment.
4 f; C  ]4 x% x) }2 T! d1 r1 T5 Q批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
" b# l1 V! `4 L( @; E! s0 oMechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
" `2 A6 e2 W* @, L  A0 j8 W* MMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
: ~  r) ?- h: h$ N; k/ k  h9 z8 nMinimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 - 晶圆片表面超过0.25毫米的缺陷。
& q4 G8 O7 p# O5 E. q0 cNotch - An indent on the edge of a wafer used for orientation purposes.
8 b- y+ v; |- {( y- f5 u) C9 M凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
直角定向误差 -
; u- m, C% N. |" l1 HParticle - A small piece of material found on a wafer that is not connected with it.
; |# ?. k+ }9 C) V7 Z3 n5 d颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
% Y7 e! w* A0 [( g, R+ PPit - A non-removable imperfection found on the surface of a wafer.
8 T% q, Z8 Y8 [# {2 I$ M- b3 X深坑 - 一种晶圆片表面无法消除的缺陷。
/ y7 w$ K! u- {( D. k; z: M* SPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
) L/ j! R8 o1 A  C优先蚀刻 -
. z) Z! b6 k: {" cPremium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
6 G! b& E4 \2 X: i+ n测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
/ g# G7 q1 c& c8 g主定位边 - 晶圆片上最长的定位边。
' l; I2 w4 T1 oProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
% Z5 @  |# q1 |/ A  ]3 GProfilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
3 c) P7 d$ ?1 ]Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
; ~, o+ i# b3 G, g* ERoughness - The texture found on the surface of the wafer that is spaced very closely together.
2 B3 ]% |/ N, H9 {% [粗糙度 - 晶圆片表面间隙很小的纹理。
) d6 Y; U4 `9 Y! \- _4 hSaw Marks - Surface irregularities
: u7 {. p) F) U锯痕 - 表面不规则。
- B8 |% Y$ t' u( ?Scan Direction - In the flatness calculation, the direction of the subsites.
扫描方向 - 平整度测量中，局部平面的方向。
: y( c. K4 m- S6 |8 J. VScanner Site Flatness -
1 V4 @* C# H& b3 \局部平整度扫描仪 -
$ c$ D/ j5 S- n5 CScratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
Shape -
$ O* Q1 p6 h& t( o4 k, A) D3 N形状 -
4 t6 s' v) _  a5 L1 V: }) rSite - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
  s/ _! u7 H5 y! F1 u6 W- hSite Array - a neighboring set of sites
% T9 I: i; S6 S7 w0 I! N局部表面系列 - 一系列的相关局部表面。
6 b- a; I; ?5 `2 e, f, ~# ?9 u, ESite Flatness -
局部平整 -
Slip - A defect pattern of small ridges found on the surface of the wafer.
2 W# [! h; K% ~划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on the wafer caused by fingerprints.
3 \3 }6 A# X( m0 c/ J+ r污迹 - 晶圆片上指纹造成的缺陷或污染。
( C6 X$ r3 W- j* f- Q+ H1 r0 zSori -
Striation - Defects or contaminations found in the shape of a helix.
条痕 - 螺纹上的缺陷或污染。
Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
1 \6 y7 F! t" m局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
* G% y  G7 f" c1 n% ESurface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
+ K( g2 W" F+ a) ]表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
5 @3 O4 B) X9 K- |测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
  t5 n4 K. {& M4 l5 _8 CTop Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
3 u( z5 Z- v+ p" \# x  {Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
Virgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
- u8 k: J# y) g& l2 ?2 }原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
) D) ?) s9 H8 K' |6 h" d& ~Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
% M! K4 Q# Y; R波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
3 Q) h; p( @7 v/ YWaviness - Widely spaced imperfections on the surface of a wafer.
波纹 - 晶圆片表面经常出现的缺陷。