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Contents
+ `! s& I' \& T* w1. Definition .....................................................................................................................60. `$ |, G8 V7 ]* i2 W7 N T
2. Background .................................................................................................................602 V1 Q1 {1 o* X) h9 B% R$ ?
2.1. Nanostructured materials .........................................................................................62! F3 r1 \2 I( p% R; L5 N
2.2. Free standing shapes ..............................................................................................62; E5 ~' ]* t V, s
2.3. Rapid prototyping ....................................................................................................63, e9 ?; c( R& v+ B. f
3. Advantages and disadvantages of CVD.......................................................................63" a' b: R) B6 h3 W2 \& u8 E
4. Thin film and coating applications.................................................................................64: k) E9 C& G8 S" e3 C
5. CVD system .................................................................................................................65" Q# Q/ Q" e- @7 Z3 y" u, x" C0 {
5.1. Chemical vapour precursor supply system ...............................................................66+ \5 }. d- x7 D' Z; F
5.2. CVD reactor .............................................................................................................679 I9 l1 T" H: T3 {, {# y
5.3. The effluent gas handling system ..............................................................................675 V Y6 X/ Q# m8 z# w
6. Process principles and deposition mechanism...............................................................70
8 p s+ ?3 g! J7. Chemical precursors and reaction chemistry.................................................................70- K$ j% p0 C4 J; z' F f' l
8. Thermodynamics, kinetics and mass transport phenomena...........................................722 b; _) k7 V) f9 Z. r$ S8 F& {
8.1. Thermodynamics ...................................................................................................... 72# c- ]- E g/ D: |7 o. U a
8.1.1. Reaction feasibility................................................................................... 72# K( [' w9 C$ {- s; P6 N, d) m
8.1.2. CVD phase diagram................................................................................. 75
/ W7 i. f- f/ s- j0 ^8.2. Kinetics..................................................................................................................... 76
% a, }' D6 e0 y% D! P2 R8.3. Mass transport phenomena ...................................................................................... 79
3 @9 r5 ~; N5 k' e8.3.1. Fluid dynamics......................................................................................... 790 w& U! L. |% a5 i( B
8.4. Mass transport control ............................................................................................. 80
+ Z: M, W# j3 x& z6 F1 {2 `9. CVD process parameters...............................................................................................80
8 y. D( I8 j) Z9.1. Coating uniformity ................................................................................................... 816 C2 D# M- T6 }/ O7 C. \
9.2. Coating–substrate adhesion......................................................................................81
2 B/ p: Z, }! c E) D/ ?9.3. Uniformity of coating composition .......................................................................... 82
5 G$ h9 V- P+ M% j" F: o10. Process monitoring and measurement of the CVD process ..........................................82! B F1 p& }& ^, Z+ b
10.1. Temperature .............................................................................................................88! u4 T2 m7 P6 ~$ I
10.2. Chemical species .......................................................................................................88" P9 P0 L" Q2 O
10.3. Fluid flow ................................................................................................................. 89
1 d& x$ S( D U% ~5 F, H1 O8 r3 i1. Process/microstructure/property relationships in CVD ....................................................89
! @5 F x) Y6 z- r" d4 G4 J11.1. Epitaxial growth .......................................................................................................90 |/ t4 w$ v: D
11.2. Polycrystalline growth ..............................................................................................90- l4 o! R3 V8 u
11.3. Whiskers ...................................................................................................................91* X; J. J3 }! t z7 a' t
11.4. Amorphous...............................................................................................................91- X7 h0 o4 Z) J. j. a. T: f( o# y' }' i
12. Variants of CVD methods............................................................................................94+ c2 G+ z2 N- `
12.1. Thermally activated chemical vapour deposition .....................................................94, p' g* S8 @5 S# r$ r' C- K/ Y, p
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
/ a1 W5 n- Y3 Woptoelectronics or energy conversion devices........................................... 96
! T, |+ H* Z. x5 M. P p2.1.2. Ceramic protective coatings ...................................................................100
T3 y; \6 \, k% {; t% P# O# i12.1.3. Diffusion coating....................................................................................103
, ?. n9 H1 n5 V8 ^" F12.1.4. Optical fibres ..........................................................................................1042 {" L/ u/ B1 V+ j v
12.1.5. Ceramic monofilament fibres .................................................................105& x& a+ O: t9 k
12.1.6. Fibre coating ..........................................................................................107
5 ?( K p' `8 ]6 Y5 \# ?) g12.2. Plasma enhanced chemical vapour deposition ..........................................110
, @" W2 Y4 K1 F5 Z) o12.2.1. Process principles ...................................................................................110
, c8 e/ }# R7 y& ^& B! Q; c( {12.2.2. Disadvantages and advantages of PECVD............................................111
) V2 ^& J3 y# @: N' ]12.2.3. Examples of applications .......................................................................114
, U) H& W$ O- ?6 Z7 `12.3. Photo-assisted chemical vapour deposition ..............................................1179 \' i! S, A% ?1 E% s
12.3.1. Photo-thermal ........................................................................................118. j2 I3 k3 U4 |( m
12.3.2. Photolytic ...............................................................................................118
+ g& T# f" {/ m8 W1 b12.3.3. Advantages.............................................................................................119
9 j1 |4 F, W* G' `' j4 G12.3.4. Applications ...........................................................................................119
* ^3 Y2 R5 v$ A( H- [, V2 o12.4. Atomic layer epitaxy process.................................................................. 121
7 K9 f9 @, C8 ?$ V" d2.5. Metalorganic chemical vapour deposition.....................................................122
2 j+ O9 j& d% P& {0 z; k2 k12.5.1. Definition ...............................................................................................1228 H2 |9 ?, T6 x% G- ^% ?; o% a
12.5.2. Process characteristics and advantages ..................................................1242 G5 \1 w, ]+ P0 h; X& Q" v+ K
12.5.3. Limitations .............................................................................................125
5 `- I s9 a" x4 D* A+ g4 ]12.5.4. Applications ...........................................................................................1253 U' `$ N( e9 X
12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
; F+ s( X- \. K' O9 N+ ?( S4 l12.6.1. Problems associated with the MOCVD method, especially for the' B0 T! K% Z; z: Q
deposition of multicomponent oxides or multilayers ............................. 125( f: Y4 q9 I" t2 r! U3 k+ h, h4 D
2.6.2. Solutions to the problems using single source and special precursor
/ L' e7 {9 @( o; @2 Qinjection methods ................................................................................... 126
' z" M! A) D5 ~! ]0 C2.6.3. Pulsed injection MOCVD ......................................................................126
7 X/ [# g+ w! x7 Y12.7. Aerosol assisted chemical vapour deposition .............................................1289 M6 ^/ @9 ^, J9 X; S/ a$ A
12.7.1. Pyrosol ...................................................................................................131/ n# f, i Q* _
12.7.2. Electrostatic assisted vapour deposition.................................................133
6 K, g( m" ~6 I$ ]5 V7 O* {12.8. Flame assisted chemical vapour deposition................................................140
; V- f: \9 r- n12.8.1. Flame-assisted vapour deposition ..........................................................142
% s, Y9 L; E- B. F12.8.2. Combustion chemical vapour deposition ...............................................143' V/ E2 x+ q" A0 A$ m4 L a) x% h% v
12.9. Electrochemical vapour deposition............................................................144+ s y' v# \2 s+ E8 C
12.9.1. Process principle.....................................................................................145
. d9 M( K5 |- f- W2 z* Y12.9.2. Kinetics and growth...............................................................................146
4 b2 h Z O7 `' ]8 `4 ]12.9.3. Comparison of CVD and EVD processes..............................................147
% I! s/ T" C& M5 a# Q' ]: \7 L7 T7 S Z" {12.9.4. Advantages.............................................................................................148* G; o& _5 v6 ~. U5 T- Q% [
12.9.5. Technological status...............................................................................148
K1 x6 X/ O9 ?, d12.9.6. Other variants ........................................................................................149! Q; p r3 u: i) v
12.10. Chemical vapour infiltration ..................................................................149/ A/ f3 w5 E5 V; _- u: p
12.10.1. Applications ...........................................................................................150; ^( U; [* Q9 @2 M9 ^- y
12.10.2. Methodology..........................................................................................1517 j% W. r2 a/ V2 K" I
12.10.3. Various CVI processes ...........................................................................1538 F) E. U# C# U" K
13.Comparison of various CVD methods.................................................................1562 t6 Q {( C* N3 o/ J
14.Comparison of CVD with other coating techniques ...........................................157, ^- R! g8 P- ?) F2 S( ~
15. Conclusions and outlook ..................................................................................159! h$ C' m' r" Y5 |
Acknowledgements....................................................................................................160$ y+ u; Q/ H3 Q* r4 k/ x! C# |
References ..............................................................................................................160 |
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