硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
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Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
8 S% Y/ h" _$ KAlignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
) w5 h' K; G) k5 XAnisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
: F. q1 U# r, e" nArea Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
. D% Z# d' {( N+ sAzimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
8 @& C) M0 \9 }1 DBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
8 g7 o$ {* \$ L1 I; qBase Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
3 R7 H1 D6 S. W7 ^8 L底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
7 F: e: \- N* T; p% C7 J双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
. Z4 X; a- I/ `$ }绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
! G- Z3 M: C1 J7 l; E& A1 C1 v  o& J1 z0 pBonding Interface - The area where the bonding of two wafers occurs.
/ J7 t$ n- O0 o绑定面 - 两个晶圆片结合的接触区。
' L/ e# }. l7 m$ F- v3 ?- v6 x/ x: lBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。
- x2 s3 r/ Z7 h! G$ I9 u% J9 kChemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
7 \- x$ q- u, tChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
0 S/ I8 R) k; S卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane - A fracture plane that is preferred.
. u8 K7 m; X. t7 B3 Q; `* I解理面 - 破裂面
3 O. S# y3 @9 }2 f1 ~Crack - A mark found on a wafer that is greater than 0.25 mm in length.
2 A! p1 z! w+ u* a; A裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
6 j" T% L* @% Z/ x- g4 MCrater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
* M, S/ H1 p+ i0 C/ E微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
* E& K2 v0 c0 k' |Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
" g  x( s/ t5 o/ e9 e' K0 C3 uConductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
Contaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
0 F$ k8 B, m0 m. T/ ^Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数 （参见米勒指数）
9 R: o& B% J. q1 e5 \Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
6 Y& f5 {# t0 r/ w2 d% k耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
3 r* g" \. i9 ^8 o, z! RDimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
: j, h0 T) z! `+ H' D; i7 h7 dDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
5 g: C5 V5 g+ X1 L2 Y& ?( JEdge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
$ ^$ Y0 V$ \, |( u: h/ I8 w6 O芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
  ]& ]3 O% j/ P1 x$ p' o8 yEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
! x( @& A& J  y1 |: O1 k质量保证区(FQA) - 晶圆片表面中央的大部分。
# W# z; M2 h/ x9 B7 ]Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
# O6 f0 \; _# B& H" k6 f- `四探针 - 测量半导体晶片表面电阻的设备。
& ]  R- Y; E' w2 O+ lFurnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
3 a& W$ Z2 t$ i  b正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
! C8 w7 |8 C7 o- u2 vGoniometer - An instrument used in measuring angles.
角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
9 c: \1 w+ w3 q& E/ j- _电阻梯度 （不推荐使用，参见“电阻变化”）
Groove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
) S+ U! J- P8 ~  v% fHand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
+ y# p2 z; I1 k8 R+ O. e3 E手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
7 K! @# P! L5 I6 ^- hHaze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
* o' P$ p% k8 r雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
: [* A/ h' r+ _  _% F' q( tHole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)
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Ingot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
- j7 d2 v+ W& ~1 z激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
Lay - The main direction of surface texture on a wafer.
: t2 k/ ~; N! }0 [) x层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
$ O  N4 I* |. o* z( U" d7 }6 x/ ELithography - The process used to transfer patterns onto wafers.
8 C7 F9 d) @- C# b. L8 d光刻 - 从掩膜到圆片转移的过程。
- ^  }6 _) |+ J9 ULocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
7 V7 s& D/ h6 x5 T( n6 CLot - Wafers of similar sizes and characteristics placed together in a shipment.
批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
1 [9 j6 ^$ H, n8 J6 r, P6 zMajority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
& M' y9 u5 B6 z* [, C/ b7 J多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
3 Q) I- P  ]5 E9 c: y0 s1 GMechanical Test Wafer - A silicon wafer used for testing purposes.
% y6 X; a! j1 O5 [1 z机械测试晶圆片 - 用于测试的晶圆片。
Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
Miller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
Minimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
) A5 l5 a5 U0 P2 gMinority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
$ S1 x0 e% J2 f( Q少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
. }) x5 H6 Q- a/ U9 X& o( tMound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
% F5 b0 V, l( Z堆垛 - 晶圆片表面超过0.25毫米的缺陷。
  N0 ~: b7 R, G! s+ |! P9 VNotch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
1 W% [! c9 _( p1 c. k6 hOrange Peel - A roughened surface that is visible to the unaided eye.
$ @# `; a9 D9 c桔皮 - 可以用肉眼看到的粗糙表面
Orthogonal Misorientation -
$ w9 H* o" K5 s' {9 {直角定向误差 -
/ D! v( f5 E3 {; f/ Y" iParticle - A small piece of material found on a wafer that is not connected with it.
颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
8 {7 n! K1 C2 `4 J" R) f6 G( G0 z, vParticulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
4 V( d. Y' `* }2 i/ Z: ePit - A non-removable imperfection found on the surface of a wafer.
深坑 - 一种晶圆片表面无法消除的缺陷。
Point Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
+ H4 r3 `. L5 W. W( H" d) A点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
4 v7 E8 |# k4 J/ Y& P/ s优先蚀刻 -
Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
; f7 ^: v$ j7 y6 q) K* V$ P主定位边 - 晶圆片上最长的定位边。
* v( y8 }$ S& l; q. R. J( aProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
% {5 X" Z, g+ i+ |' [/ o加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
Profilometer - A tool that is used for measuring surface topography.
6 K* e& Y$ A# M. }表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
1 O) P$ Q$ m5 ~0 a8 I0 HResistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
8 n  L/ W+ N+ @% B, j' ]电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
; @& J) u$ |: E7 m4 k; A  q; yRequired - The minimum specifications needed by the customer when ordering wafers.
必需 - 订购晶圆片时客户必须达到的最小规格。
# Z* @9 T6 g  s3 ?# y7 U- jRoughness - The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 - 晶圆片表面间隙很小的纹理。
Saw Marks - Surface irregularities
锯痕 - 表面不规则。
+ k) G2 l$ T. A1 eScan Direction - In the flatness calculation, the direction of the subsites.
+ c# q3 K+ i+ K7 [% |1 c# P( F扫描方向 - 平整度测量中，局部平面的方向。
Scanner Site Flatness -
, ?! @2 j- S  a2 `局部平整度扫描仪 -
Scratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
2 k! d; I/ e3 m, E' PShape -
形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
) l# w! q4 c/ J; r! f4 p局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
% `# {& }4 X, h# P7 WSite Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
Site Flatness -
局部平整 -
6 e! o) K. }0 A) Y- O7 MSlip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
$ u" R# M/ M9 t' rSmudge - A defect or contamination found on the wafer caused by fingerprints.
# `9 y) k! ^) v/ B污迹 - 晶圆片上指纹造成的缺陷或污染。
Sori -
' E4 k% j( Y) D# f& QStriation - Defects or contaminations found in the shape of a helix.
) L6 v: z: p, a2 ~% O3 d  C0 U条痕 - 螺纹上的缺陷或污染。
Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
  k8 B6 [0 \; y6 VTest Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
1 G6 W8 z4 ~3 j6 A顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
8 g& \+ D2 o& Y1 j- J1 lTotal Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
- K+ ~4 z. V; }+ Y3 a$ b* m总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
. W3 C- S& c9 o- dVirgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
3 t* h  \, ?+ D原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
3 W+ ?8 S4 U  a4 i! {8 ]: O- KWaves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
( |4 O# }6 |; d+ Y5 W+ Z2 h波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
/ O% F" \6 f9 n: dWaviness - Widely spaced imperfections on the surface of a wafer.
# ]" f0 O% @7 E波纹 - 晶圆片表面经常出现的缺陷。