|
|
马上注册,结识高手,享用更多资源,轻松玩转三维网社区。
您需要 登录 才可以下载或查看,没有帐号?注册
x
Contents( I& [1 |6 c- s6 r5 w! D& g
1. Definition .....................................................................................................................60
/ ?! k4 m, M1 q- J2. Background .................................................................................................................60
: G/ h. P% h4 \2 q! Q7 G$ [, F2.1. Nanostructured materials .........................................................................................62( I- j8 t% n. ~ t7 m! @# a
2.2. Free standing shapes ..............................................................................................626 O9 e. w( i) y( x3 U
2.3. Rapid prototyping ....................................................................................................63 r6 i( K4 f. k G( Z
3. Advantages and disadvantages of CVD.......................................................................63! N& U& I+ O/ Z5 s8 N
4. Thin film and coating applications.................................................................................64$ o3 ]2 a' H/ a8 i7 E
5. CVD system .................................................................................................................65
b* `2 \. v2 ~( M5.1. Chemical vapour precursor supply system ...............................................................66
9 X" z# G. S0 l! K5.2. CVD reactor .............................................................................................................675 A. C7 q3 N% ~( b$ M! R
5.3. The effluent gas handling system ..............................................................................67 c8 L9 i. O9 V, _9 ^3 f
6. Process principles and deposition mechanism...............................................................70+ U b6 E( y& {0 L3 \/ z
7. Chemical precursors and reaction chemistry.................................................................70/ [# ^$ t7 _! ^6 C6 T. p/ q3 R5 U
8. Thermodynamics, kinetics and mass transport phenomena...........................................72
0 m J: {; Q( F! G2 t& m( u5 v8.1. Thermodynamics ...................................................................................................... 72
: m9 y( L3 G" o4 N8 ~" `) V3 @8.1.1. Reaction feasibility................................................................................... 728 J' P) `5 g6 {* T+ R: M
8.1.2. CVD phase diagram................................................................................. 75/ W' D0 t, ~4 ]- d' E* {7 q
8.2. Kinetics..................................................................................................................... 76( z s2 I- c0 w3 Y
8.3. Mass transport phenomena ...................................................................................... 79: S+ G* j; w% x6 t
8.3.1. Fluid dynamics......................................................................................... 790 E4 l- }7 f5 M* X/ l! \
8.4. Mass transport control ............................................................................................. 80
/ C. d, V( O' g9. CVD process parameters...............................................................................................80
, P4 h+ r9 y; d! Y9.1. Coating uniformity ................................................................................................... 815 q7 N+ V- u+ f
9.2. Coating–substrate adhesion......................................................................................81& e0 K" D0 e9 A
9.3. Uniformity of coating composition .......................................................................... 82
( z1 @/ V! J& T. _+ I3 J. C10. Process monitoring and measurement of the CVD process ..........................................82( i/ M2 a- x! Y
10.1. Temperature .............................................................................................................88! X/ l& ` U, s# w
10.2. Chemical species .......................................................................................................88, N: }, S6 d7 o% T: n3 ~& L
10.3. Fluid flow ................................................................................................................. 89- H$ }$ w! u7 X
1. Process/microstructure/property relationships in CVD ....................................................89
+ ^8 Y& l$ {' W6 X% K- Y11.1. Epitaxial growth .......................................................................................................902 A/ R. e, p8 C; m3 T. x% ~; N
11.2. Polycrystalline growth ..............................................................................................90
& y; `! J; s! O1 k* f11.3. Whiskers ...................................................................................................................91( z$ ~$ i+ _" \' P( f
11.4. Amorphous...............................................................................................................91( k8 }2 I& Q3 e; O
12. Variants of CVD methods............................................................................................94; M/ B, Y2 ?5 P0 [% H. ?0 ~
12.1. Thermally activated chemical vapour deposition .....................................................94 H' m0 o, T& c$ ~
12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
- M0 }, ?3 y3 ~optoelectronics or energy conversion devices........................................... 96 @3 ~0 a* I" n9 q$ T
2.1.2. Ceramic protective coatings ...................................................................100
+ ?$ b4 L$ F2 p# S12.1.3. Diffusion coating....................................................................................103
/ ?; w" ]% K- G12.1.4. Optical fibres ..........................................................................................104
8 Q8 M' ]: ~# `- n, r- V12.1.5. Ceramic monofilament fibres .................................................................105- z. o4 v3 O# x4 A$ c8 e' u6 h) K6 [
12.1.6. Fibre coating ..........................................................................................107
( K3 I! {8 F0 o$ |12.2. Plasma enhanced chemical vapour deposition ..........................................110% w. R7 i6 ~: q3 D
12.2.1. Process principles ...................................................................................110! X# x4 E/ F* }2 k( O# \) E
12.2.2. Disadvantages and advantages of PECVD............................................111
; A* G1 v# e3 y! M1 T4 H% i6 g12.2.3. Examples of applications .......................................................................114# r/ r# N/ O$ Z( }6 o* A8 ?
12.3. Photo-assisted chemical vapour deposition ..............................................117, E# }7 z! _. [ U' w c
12.3.1. Photo-thermal ........................................................................................118$ P1 w/ K1 o9 d# ?9 m1 s
12.3.2. Photolytic ...............................................................................................118; O7 J/ B: i& z0 N1 U5 k
12.3.3. Advantages.............................................................................................119
. A+ d' N' f8 i) M) G3 g# q12.3.4. Applications ...........................................................................................119
7 p+ d: z( K" s6 k1 K5 j" `12.4. Atomic layer epitaxy process.................................................................. 121
/ {- Z( l6 ]6 |7 s2.5. Metalorganic chemical vapour deposition.....................................................122; D( ]' _! D- A) ~) D
12.5.1. Definition ...............................................................................................122! Y* n/ f) V& l$ _, x% s
12.5.2. Process characteristics and advantages ..................................................1248 Y( J/ c5 ?: ]' l) f- a$ ]
12.5.3. Limitations .............................................................................................125. t9 C7 k( i: c& m
12.5.4. Applications ...........................................................................................125
$ n. D o! k, v. R. o1 k4 ^8 Z12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
+ O- B( F6 U7 M& N1 R E0 @4 I12.6.1. Problems associated with the MOCVD method, especially for the) s* U* N) }! ]+ X. j5 r
deposition of multicomponent oxides or multilayers ............................. 125
, P! [4 ]7 R+ ?: ], y2.6.2. Solutions to the problems using single source and special precursor, ~ w( s- V+ r, z6 u% m y9 @
injection methods ................................................................................... 1265 F/ T8 Q5 Q6 _! x, n% L8 C
2.6.3. Pulsed injection MOCVD ......................................................................126
$ p% f* o7 w [8 s12.7. Aerosol assisted chemical vapour deposition .............................................128
5 E' D+ e1 G# D" N5 P/ B+ I12.7.1. Pyrosol ...................................................................................................131
5 j* [* u: i* e7 R+ u' E12.7.2. Electrostatic assisted vapour deposition.................................................133 o' S! t N% C) t- b/ A
12.8. Flame assisted chemical vapour deposition................................................140
+ s7 D O/ U1 ~12.8.1. Flame-assisted vapour deposition ..........................................................142
) [& H& I% Z7 I, u+ i0 g1 Q; z12.8.2. Combustion chemical vapour deposition ...............................................143
( P. U, ~" G0 Y3 Y12.9. Electrochemical vapour deposition............................................................144. G1 {* q6 x" M
12.9.1. Process principle.....................................................................................145; _( T0 J7 t: n8 M6 E4 D9 Y
12.9.2. Kinetics and growth...............................................................................146
. b, y; {% b0 I* x7 u12.9.3. Comparison of CVD and EVD processes..............................................147' v0 @+ \& z' O" R- b# U2 ~. ^
12.9.4. Advantages.............................................................................................148) X8 m9 X9 Y7 m; _
12.9.5. Technological status...............................................................................148, `9 `$ }. ~$ n7 l$ f
12.9.6. Other variants ........................................................................................149
7 ?+ d& u [" U' m$ w12.10. Chemical vapour infiltration ..................................................................149( r) U: V. z( [' H h% W% Y6 p
12.10.1. Applications ...........................................................................................150
t7 J4 S, W( R: T, h* v f12.10.2. Methodology..........................................................................................151
) `* i4 E* }/ i% Y9 N5 \" l( _/ ?2 r/ g: ^12.10.3. Various CVI processes ...........................................................................153
* C8 a$ U* Z; U5 N2 r13.Comparison of various CVD methods.................................................................156) ]# y* G- K6 a2 [
14.Comparison of CVD with other coating techniques ...........................................157) v0 u% X* Z: ^5 ?: m, y' w& D
15. Conclusions and outlook ..................................................................................159
/ q6 l& p. Y0 W2 J: [, R4 S$ |Acknowledgements....................................................................................................1607 J' K% N) u- p1 ]1 C3 y
References ..............................................................................................................160 |
评分
-
查看全部评分
|