硅片行业术语大全(中英文对照 A-H)

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硅片行业术语大全(中英文对照 A-H)
# g% f( K; Y  Z- X
Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
  E; B" e" p. Z4 g! L0 QAlignment Precision - Displacement of patterns that occurs during the photolithography process.
套准精度 - 在光刻工艺中转移图形的精度。
Anisotropic - A process of etching that has very little or no undercutting
各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
7 Z, v7 S9 |, Y2 g" W$ S7 l2 NArea Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
9 ^7 ?: ?5 h. S9 u7 {Backside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
2 ]4 h4 v1 {! K# x3 l- W背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
* Y+ u1 b9 G  T+ C! M5 S6 s/ {底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
& @4 d  D  L, c- i: k: l9 [9 RBipolar - Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
Bonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the bonding of two wafers occurs.
8 }; ?. s/ P% r% ?绑定面 - 两个晶圆片结合的接触区。
( q) M# R' A6 z- F# S- @0 V1 SBuried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
( t/ h! i8 @4 e- Z, K) U埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
" v# U/ u2 ]9 gBuried Oxide Layer (BOX) - The layer that insulates between the two wafers.
9 A  |6 j7 f7 m: t2 @) ^( \氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
) g  q2 l3 H" |- ~Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。
Chemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
" U' h& C: p. Y* I- O化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
+ S* ~% F6 i3 b, U5 f" Q7 [# g5 yChuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
' _) `2 n3 ]- q/ c; w" ]卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
Cleavage Plane - A fracture plane that is preferred.
解理面 - 破裂面
Crack - A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
7 A  F% t" y: v. N" h9 CCrater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
% N7 n4 ?9 A  C. X" @Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
4 n! N& O/ P2 w* R/ b2 H传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
Conductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
1 n. u. |- i$ e1 ?/ j+ RContaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
! X+ W5 Z! \( `- {2 l- EContamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
, v6 t- E$ T5 m1 C8 y3 i晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
$ z' Q. C; s! A! }Crystal Indices (see Miller indices)
; @+ m$ w: Z  M晶体指数 （参见米勒指数）
5 r' V) N9 G, s* T  f: V, r, wDepletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
. @' A- _# M- k  u耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
  u: j5 E( V( UDimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
/ a, K- K+ c# M5 n3 o7 l表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
Dopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
/ |9 r; U9 _5 ^) e+ ~7 E2 H搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
1 ?! S% O: H3 z8 NDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
7 `5 l" y4 L8 v5 Y; N1 n, R掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
0 a$ \* H# W$ U0 |+ M$ wEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
4 q9 \7 [! R9 e边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
Edge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
" K0 E- k3 l0 [9 z' n蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
. v* B8 y5 d7 s4 z9 m  Q$ ?Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
. k  U0 z& z# r* xFlat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
0 t. z6 T: x$ Q平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
Four-Point Probe - Test equipment used to test resistivity of wafers.
四探针 - 测量半导体晶片表面电阻的设备。
7 }7 f' ~! U$ R  I: {! ^Furnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
  x6 @! i: P5 f" Z0 Z6 @炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
, o3 R. z+ _8 s& h& Q" |Goniometer - An instrument used in measuring angles.
. V, T, U; h% L! f) O' X角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
- K( l5 R7 N4 Q  ^- A; y电阻梯度 （不推荐使用，参见“电阻变化”）
  C" }4 _, U8 I" C6 @  b" aGroove - A scratch that was not completely polished out.
凹槽 - 没有被完全清除的擦伤。
) n7 x& `' z7 k7 U6 b- R) ?Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
& t3 n1 u8 ]7 W7 z% P, k1 i- [手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)

' ?# f' Y4 h3 H) b8 N1 C0 FIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
- n/ {) z0 ]( D7 T/ [Laser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
# z; W. s* ?% y; j6 v激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
; i8 l/ T2 [- I  b8 X- jLay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
4 \: M! |& [' S9 v光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
Lithography - The process used to transfer patterns onto wafers.
7 p9 S, ?. b& `1 l9 {光刻 - 从掩膜到圆片转移的过程。
/ d* D2 o( u' o! V8 v0 b) uLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
/ `: Z$ ^4 n- x- {' P/ GLot - Wafers of similar sizes and characteristics placed together in a shipment.
8 ^  ]* @- ^0 F& u$ Q, m批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
Majority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
8 q, j% g  D) l* d3 c6 S$ _9 s3 Z) ?2 `Mechanical Test Wafer - A silicon wafer used for testing purposes.
机械测试晶圆片 - 用于测试的晶圆片。
6 J' S* x4 ]3 Z6 ~( ]Microroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
" m! k" @* ?7 ~. YMiller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
: n2 e7 W2 W$ F* ?+ B  K9 yMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
: T! S1 H+ |+ q$ N/ `- B9 QMinimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
最小条件或方向 - 确定晶圆片是否合格的允许条件。
Minority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
1 y- f  t- ^1 |* ?1 Y% B* S, c少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
Mound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
; z- |& S" s4 o/ _7 l: S( kOrange Peel - A roughened surface that is visible to the unaided eye.
桔皮 - 可以用肉眼看到的粗糙表面
2 Z& a- h3 ~& M7 I6 e% LOrthogonal Misorientation -
直角定向误差 -
1 w1 m+ m1 K# ~. W" g; Y6 bParticle - A small piece of material found on a wafer that is not connected with it.
/ v' q5 B3 t3 W颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
颗粒污染 - 晶圆片表面的颗粒。
Pit - A non-removable imperfection found on the surface of a wafer.
" k; X; A6 ^# c3 ^深坑 - 一种晶圆片表面无法消除的缺陷。
$ _6 o1 i# v, O/ H& r+ RPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
2 k, G; s) _3 m6 Q- s- ePreferential Etch -
! q8 ~' Z# c' l8 e7 O优先蚀刻 -
Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
Primary Orientation Flat - The longest flat found on the wafer.
* p( u& t  h3 W, j- J& o: B主定位边 - 晶圆片上最长的定位边。
  c( }+ d( H9 m, |+ m! pProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
  X7 Q. e) C* ~, r* ^加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
  P  `, G9 C: lProfilometer - A tool that is used for measuring surface topography.
& S  R0 D% \$ v( N2 {7 i1 k表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
, l1 x4 m% k/ `. SRequired - The minimum specifications needed by the customer when ordering wafers.
# l6 n& u/ Y: w. C3 Q4 M5 y2 o3 u必需 - 订购晶圆片时客户必须达到的最小规格。
Roughness - The texture found on the surface of the wafer that is spaced very closely together.
粗糙度 - 晶圆片表面间隙很小的纹理。
3 j% f, y4 Z# y: T+ }0 \Saw Marks - Surface irregularities
3 W- P5 [9 N/ U; O0 H. D锯痕 - 表面不规则。
Scan Direction - In the flatness calculation, the direction of the subsites.
3 g5 _: F. _& i, m扫描方向 - 平整度测量中，局部平面的方向。
$ p- u3 d8 _! `9 z. ]9 U' n% wScanner Site Flatness -
% q- Y) f! z7 A! a/ q0 M6 g局部平整度扫描仪 -
Scratch - A mark that is found on the wafer surface.
6 _& }7 H# p6 ~& X! l擦伤 - 晶圆片表面的痕迹。
0 ^4 r) X+ N# |Secondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
% }2 U8 W  U. z8 @$ TShape -
3 b; }5 G0 }, a# {& N形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
2 l- u0 k" \! V& f局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
. z+ _( W$ A- N1 E3 s( i. h局部表面系列 - 一系列的相关局部表面。
Site Flatness -
局部平整 -
9 z3 k" Q' N$ l+ G4 D- _Slip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
Sori -
Striation - Defects or contaminations found in the shape of a helix.
条痕 - 螺纹上的缺陷或污染。
Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
/ M/ N0 ~" L4 P. [& S局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
; k4 H; J, X+ Z8 n2 l4 }$ \+ t; pSurface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
& W7 {: d( O" d2 \# B: X' `. g6 b表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
Total Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
: A6 ]1 Q0 m' z5 W0 T% e7 X总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
0 H5 D6 ?* k% Y7 NVirgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
6 w- c; ~( r& o0 |原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
; L- ~( X9 s0 B; ]9 ^无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
Waves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
5 ]9 J9 ~; s7 j* J! Z波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness - Widely spaced imperfections on the surface of a wafer.
) ?8 U* ^# [1 @$ s5 }波纹 - 晶圆片表面经常出现的缺陷。