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Contents
% A7 l) i) [! A# M1. Definition .....................................................................................................................60
) P. B$ Z3 S! X" w- P2. Background .................................................................................................................604 c7 s( E4 a6 h9 R
2.1. Nanostructured materials .........................................................................................62
" p8 e3 ^3 g: _* G) K2.2. Free standing shapes ..............................................................................................62: P) P2 L+ G1 {) O
2.3. Rapid prototyping ....................................................................................................630 ~. H, c9 t8 @9 M
3. Advantages and disadvantages of CVD.......................................................................63
8 ^1 L* j4 G D1 z4. Thin film and coating applications.................................................................................64
' t9 S% r8 @& ?: C0 O* I+ a* W5. CVD system .................................................................................................................65
?! `/ P- Y! h8 u. b2 p5.1. Chemical vapour precursor supply system ...............................................................66
' J# B* C- }# M/ x/ o8 a# ~5.2. CVD reactor .............................................................................................................67
1 r" a/ L0 l& _6 }8 ~5.3. The effluent gas handling system ..............................................................................67
9 n# l6 q9 h. l1 V8 r) w% G6. Process principles and deposition mechanism...............................................................700 q' F; o0 B2 C' Z
7. Chemical precursors and reaction chemistry.................................................................70& A% {8 [5 o k& v. \3 j. q
8. Thermodynamics, kinetics and mass transport phenomena...........................................722 U, C+ ]5 [' z+ W% {; l
8.1. Thermodynamics ...................................................................................................... 72
+ S0 K* L; V4 Z5 t2 ~8.1.1. Reaction feasibility................................................................................... 72
. q5 D1 J& @0 o1 M8 s) D$ I: H# s8.1.2. CVD phase diagram................................................................................. 757 o0 t& i) o( ^
8.2. Kinetics..................................................................................................................... 76; p4 I$ d) n! w f+ @: P6 b
8.3. Mass transport phenomena ...................................................................................... 79
2 o5 V$ j; |+ [$ v4 w# F8.3.1. Fluid dynamics......................................................................................... 79& P1 T5 g& e4 ]3 }9 b) H; N( J
8.4. Mass transport control ............................................................................................. 80
# r" x {$ o' Q9. CVD process parameters...............................................................................................80. u& Y& k& L% X6 `
9.1. Coating uniformity ................................................................................................... 814 L0 V( l5 K! {- X( o! G
9.2. Coating–substrate adhesion......................................................................................81- ~# h0 r) o. H+ ? N: [
9.3. Uniformity of coating composition .......................................................................... 823 C- R$ D/ F4 R" E) v4 P7 j
10. Process monitoring and measurement of the CVD process ..........................................82
6 \0 L" m4 o( ^! c0 ?/ J10.1. Temperature .............................................................................................................88
X$ f2 m, c4 n C3 ^10.2. Chemical species .......................................................................................................887 G2 r$ R" W% @1 c7 G
10.3. Fluid flow ................................................................................................................. 895 C) w! ]$ S! T- {% F9 q% m
1. Process/microstructure/property relationships in CVD ....................................................89+ J$ [6 e8 k' M5 K9 I& X+ D0 H) b
11.1. Epitaxial growth .......................................................................................................90
" E7 d! ]5 x$ Z" K$ f* f$ L11.2. Polycrystalline growth ..............................................................................................90
' M6 n$ C; ]: G4 l; s11.3. Whiskers ...................................................................................................................912 _0 f/ s" w! ]* f" g9 I
11.4. Amorphous...............................................................................................................91
1 {6 ]* {" x# s' B12. Variants of CVD methods............................................................................................94% d* n% H" m+ X! c, ?4 |, p
12.1. Thermally activated chemical vapour deposition .....................................................94
! f& B" J* }9 E12.1.1. Semiconductors, dielectric and metallic films for microelectronics,, a/ g% E7 ~9 a
optoelectronics or energy conversion devices........................................... 96
, W6 X5 F0 n1 j3 r3 _6 O+ U2 J2.1.2. Ceramic protective coatings ...................................................................1008 x) m. \0 ]; S0 C
12.1.3. Diffusion coating....................................................................................103( r4 o |8 Q# w" N4 J" P- ~& u0 J
12.1.4. Optical fibres ..........................................................................................104, U0 D2 [+ P6 b$ v
12.1.5. Ceramic monofilament fibres .................................................................105$ S7 ^: S3 W. I: @& p5 n; {! }5 D3 v
12.1.6. Fibre coating ..........................................................................................107 U) D8 A+ a5 f2 I- }0 S5 [
12.2. Plasma enhanced chemical vapour deposition ..........................................110
( G0 C- X( `9 F/ m12.2.1. Process principles ...................................................................................110
! Y1 S- J9 M6 w! \( R) I12.2.2. Disadvantages and advantages of PECVD............................................111
+ o0 J/ G1 {5 m0 ~6 ]) x& `12.2.3. Examples of applications .......................................................................114
# H; N' _3 R8 H' G1 K: i J3 i12.3. Photo-assisted chemical vapour deposition ..............................................117
' T3 b9 G2 I; [4 N2 U4 z: W12.3.1. Photo-thermal ........................................................................................118
6 ?$ P% X' u8 t12.3.2. Photolytic ...............................................................................................118) ^' c. f1 `0 B
12.3.3. Advantages.............................................................................................1197 s" c( K* {) t- s0 L
12.3.4. Applications ...........................................................................................119. R) G/ e# O$ f4 `* L4 {
12.4. Atomic layer epitaxy process.................................................................. 121
0 f: r: V& a* f: j* j. O" e2.5. Metalorganic chemical vapour deposition.....................................................122
* X0 x4 g1 H+ V6 {3 f( m12.5.1. Definition ...............................................................................................122
7 v( D& V. r- x8 H1 q12.5.2. Process characteristics and advantages ..................................................124
4 D$ A, a) O3 Q9 _12.5.3. Limitations .............................................................................................125
z7 X4 l. a( H# e. l12.5.4. Applications ...........................................................................................125
3 D5 |1 x" D. o2 Q' j" | O; _, q12.6. Pulsed injection metalorganic chemical vapour deposition ........................125
+ A. s H) S, J, K7 d* R8 l) E12.6.1. Problems associated with the MOCVD method, especially for the
/ C i/ ^5 d7 Z) c( h) @2 y. @deposition of multicomponent oxides or multilayers ............................. 125
; Z6 h6 P9 A0 U0 J' e- ^# E2.6.2. Solutions to the problems using single source and special precursor h1 p4 R1 V: \; ^# O8 H
injection methods ................................................................................... 126
5 k8 q; f2 X$ y! `' c* u2 V2.6.3. Pulsed injection MOCVD ......................................................................126
0 v0 i/ v. M6 Q8 N, [/ Y12.7. Aerosol assisted chemical vapour deposition .............................................128
# R8 E% V% g1 Q12.7.1. Pyrosol ...................................................................................................131, M1 q4 H4 F2 w. }/ n9 q- X+ B- h
12.7.2. Electrostatic assisted vapour deposition.................................................133# ]$ P4 p* O8 ?; i) b: A( }$ ~( d
12.8. Flame assisted chemical vapour deposition................................................140% \0 |. U' ?5 e" k+ G) u& N& N+ M% z
12.8.1. Flame-assisted vapour deposition ..........................................................1429 Z) o# o0 u5 M- P/ t+ p8 P
12.8.2. Combustion chemical vapour deposition ...............................................143
% z. j9 E7 b$ O5 B+ j1 ^" z; Y, D; V12.9. Electrochemical vapour deposition............................................................144' J+ D1 z/ F+ X4 Y5 [
12.9.1. Process principle.....................................................................................145
5 a% r& a9 B2 y12.9.2. Kinetics and growth...............................................................................146
1 f7 f( I1 b8 `" d2 J9 g12.9.3. Comparison of CVD and EVD processes..............................................147
' F% k+ P( B! V( I12.9.4. Advantages.............................................................................................148
8 y' [5 k* x8 Y5 z4 m' B12.9.5. Technological status...............................................................................1486 N! X( O! P) J! d3 a
12.9.6. Other variants ........................................................................................149
$ G$ c! D4 r k( y7 O12.10. Chemical vapour infiltration ..................................................................149
8 E; q( H1 N5 X$ u12.10.1. Applications ...........................................................................................150
8 b- m5 v8 J' U/ h3 D( x" p) ]12.10.2. Methodology..........................................................................................151
9 N7 t4 \. @* O' C12.10.3. Various CVI processes ...........................................................................153# |4 H3 b, N2 q" `+ O
13.Comparison of various CVD methods.................................................................156% [3 K8 w% K; K' e. U! v
14.Comparison of CVD with other coating techniques ...........................................157
( N. U. p9 b! v% S3 v# S, J15. Conclusions and outlook ..................................................................................159 d' n9 a# t% P) l5 P" v
Acknowledgements....................................................................................................160$ o9 q4 z* K$ g$ }# N' e( g. }7 r6 R
References ..............................................................................................................160 |
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