硅片行业术语大全(中英文对照 A-H)

rgsmdqy

硅片行业术语大全(中英文对照 A-H)
9 t/ V2 d& I) X& X* {( f! s
Acceptor - An element, such as boron, indium, and gallium used to create a free hole in a semiconductor. The acceptor atoms are required to have one less valence electron than the semiconductor.
! O/ }, ~& a6 i0 |$ i受主 -  一种用来在半导体中形成空穴的元素，比如硼、铟和镓。受主原子必须比半导体元素少一价电子
# N( Y) v0 r: |# @8 r. r1 dAlignment Precision - Displacement of patterns that occurs during the photolithography process.
2 P+ f" L7 V1 E" k3 V+ P0 y; ]套准精度 - 在光刻工艺中转移图形的精度。
9 U! B2 c) q+ H) H0 |6 {Anisotropic - A process of etching that has very little or no undercutting
# F. K; A" X% A9 P7 F, u5 Z各向异性 - 在蚀刻过程中，只做少量或不做侧向凹刻。
Area Contamination - Any foreign particles or material that are found on the surface of a wafer. This is viewed as discolored or smudged, and it is the result of stains, fingerprints, water spots, etc.
沾污区域 - 任何在晶圆片表面的外来粒子或物质。由沾污、手印和水滴产生的污染。
" C: g) a+ l2 b3 [, D& y* X* _Azimuth, in Ellipsometry - The angle measured between the plane of incidence and the major axis of the ellipse.
椭圆方位角 - 测量入射面和主晶轴之间的角度。
% w: }' U' Y! |- [* N) M7 bBackside - The bottom surface of a silicon wafer. (Note: This term is not preferred; instead, use ‘back surface’.)
* V9 R! ?9 i8 ]( k2 Q& A+ |背面 - 晶圆片的底部表面。（注：不推荐该术语，建议使用“背部表面”）
Base Silicon Layer - The silicon wafer that is located underneath the insulator layer, which supports the silicon film on top of the wafer.
底部硅层 - 在绝缘层下部的晶圆片，是顶部硅层的基础。
Bipolar - Transistors that are able to use both holes and electrons as charge carriers.
双极晶体管 - 能够采用空穴和电子传导电荷的晶体管。
! {  I: j  s3 x! \+ r0 h8 XBonded Wafers - Two silicon wafers that have been bonded together by silicon dioxide, which acts as an insulating layer.
" l  f0 t( ~) Y6 T: _' P, H绑定晶圆片 - 两个晶圆片通过二氧化硅层结合到一起，作为绝缘层。
Bonding Interface - The area where the bonding of two wafers occurs.
( ?  F/ y) g3 ~3 J6 w+ Z* E绑定面 - 两个晶圆片结合的接触区。
Buried Layer - A path of low resistance for a current moving in a device. Many of these dopants are antimony and arsenic.
5 a3 G; v" f6 Y2 j. E2 }- }' T5 _8 L埋层 - 为了电路电流流动而形成的低电阻路径，搀杂剂是锑和砷。
Buried Oxide Layer (BOX) - The layer that insulates between the two wafers.
氧化埋层(BOX) - 在两个晶圆片间的绝缘层。
Carrier - Valence holes and conduction electrons that are capable of carrying a charge through a solid surface in a silicon wafer.
载流子 - 晶圆片中用来传导电流的空穴或电子。
7 g1 N6 a. T2 Z5 DChemical-Mechanical Polish (CMP) - A process of flattening and polishing wafers that utilizes both chemical removal and mechanical buffing. It is used during the fabrication process.
" h. D$ P+ N9 i( q, J/ Z( |9 a化学-机械抛光(CMP) - 平整和抛光晶圆片的工艺，采用化学移除和机械抛光两种方式。此工艺在前道工艺中使用。
Chuck Mark - A mark found on either surface of a wafer, caused by either a robotic end effector, a chuck, or a wand.
卡盘痕迹 - 在晶圆片任意表面发现的由机械手、卡盘或托盘造成的痕迹。
, c, u' X* a5 o# A2 {Cleavage Plane - A fracture plane that is preferred.
! I- I0 c3 o; r1 T1 l4 a9 a( p解理面 - 破裂面
Crack - A mark found on a wafer that is greater than 0.25 mm in length.
裂纹 - 长度大于0.25毫米的晶圆片表面微痕。
Crater - Visible under diffused illumination, a surface imperfection on a wafer that can be distinguished individually.
, `2 a0 Q' i" O. n1 f& r) ^微坑 - 在扩散照明下可见的，晶圆片表面可区分的缺陷。
( A+ O% t5 e- |) b( Z1 [Conductivity (electrical) - A measurement of how easily charge carriers can flow throughout a material.
传导性（电学方面） - 一种关于载流子通过物质难易度的测量指标 。
& x) m2 R; U* e: KConductivity Type - The type of charge carriers in a wafer, such as “N-type” and “P-type”.
导电类型 - 晶圆片中载流子的类型，N型和P型。
) N/ A+ B. k* H7 x+ UContaminant, Particulate (see light point defect)
污染微粒 （参见光点缺陷）
Contamination Area - An area that contains particles that can negatively affect the characteristics of a silicon wafer.
沾污区域 - 部分晶圆片区域被颗粒沾污，造成不利特性影响。
Contamination Particulate - Particles found on the surface of a silicon wafer.
沾污颗粒 - 晶圆片表面上的颗粒。
Crystal Defect - Parts of the crystal that contain vacancies and dislocations that can have an impact on a circuit’s electrical performance.
8 M3 V4 G2 K/ L) P. {晶体缺陷 - 部分晶体包含的、会影响电路性能的空隙和层错。
Crystal Indices (see Miller indices)
晶体指数 （参见米勒指数）
Depletion Layer - A region on a wafer that contains an electrical field that sweeps out charge carriers.
. N% v; n) Y* g# t耗尽层 - 晶圆片上的电场区域，此区域排除载流子。
+ x5 K. M7 H4 h$ uDimple - A concave depression found on the surface of a wafer that is visible to the eye under the correct lighting conditions.
表面起伏 - 在合适的光线下通过肉眼可以发现的晶圆片表面凹陷。
Donor - A contaminate that has donated extra “free” electrons, thus making a wafer “N-Type”.
* S' c; p  n: A  i施主 - 可提供“自由”电子的搀杂物，使晶圆片呈现为N型。
: v/ Q- f6 d( z  a( PDopant - An element that contributes an electron or a hole to the conduction process, thus altering the conductivity. Dopants for silicon wafers are found in Groups III and V of the Periodic Table of the Elements.
) ?/ b% {* @1 H6 l0 h9 ]; t搀杂剂 - 可以为传导过程提供电子或空穴的元素，此元素可以改变传导特性。晶圆片搀杂 剂可以在元素周期表的III 和 V族元素中发现。
9 o' O2 O2 T3 y# CDoping - The process of the donation of an electron or hole to the conduction process by a dopant.
- q% g2 g) \( }6 u/ `: {- h掺杂 - 把搀杂剂掺入半导体，通常通过扩散或离子注入工艺实现。
Edge Chip and Indent - An edge imperfection that is greater than 0.25 mm.
芯片边缘和缩进 - 晶片中不完整的边缘部分超过0.25毫米。
$ ^3 q$ A  ~6 a+ r4 }, x2 KEdge Exclusion Area - The area located between the fixed quality area and the periphery of a wafer. (This varies according to the dimensions of the wafer.)
边缘排除区域 - 位于质量保证区和晶圆片外围之间的区域。（根据晶圆片的尺寸不同而有所不同。）
; f" Y- m5 G1 S+ G7 F5 I3 kEdge Exclusion, Nominal (EE) - The distance between the fixed quality area and the periphery of a wafer.
名义上边缘排除(EE) - 质量保证区和晶圆片外围之间的距离
Edge Profile - The edges of two bonded wafers that have been shaped either chemically or mechanically.
边缘轮廓 - 通过化学或机械方法连接起来的两个晶圆片边缘。
Etch - A process of chemical reactions or physical removal to rid the wafer of excess materials.
  |% V) e5 p" ?. z蚀刻 - 通过化学反应或物理方法去除晶圆片的多余物质。
# n& D6 E& n6 {* i; C) f8 ~Fixed Quality Area (FQA) - The area that is most central on a wafer surface.
质量保证区(FQA) - 晶圆片表面中央的大部分。
Flat - A section of the perimeter of a wafer that has been removed for wafer orientation purposes.
8 Z+ E- e2 K: e平边 - 晶圆片圆周上的一个小平面，作为晶向定位的依据。
Flat Diameter - The measurement from the center of the flat through the center of the wafer to the opposite edge of the wafer. (Perpendicular to the flat)
平口直径 - 由小平面的中心通过晶圆片中心到对面边缘的直线距离。
$ B! A2 t: d/ C, ~+ t1 xFour-Point Probe - Test equipment used to test resistivity of wafers.
& g. }9 d+ g+ M4 w3 t7 O( _四探针 - 测量半导体晶片表面电阻的设备。
2 J0 o" p. {$ EFurnace and Thermal Processes - Equipment with a temperature gauge used for processing wafers. A constant temperature is required for the process.
9 ~- |% t6 u/ [0 @4 e炉管和热处理 - 温度测量的工艺设备，具有恒定的处理温度。
Front Side - The top side of a silicon wafer. (This term is not preferred; use front surface instead.)
, q* ?) o8 `4 r正面 - 晶圆片的顶部表面（此术语不推荐，建议使用“前部表面”）。
* I" A. X- P5 TGoniometer - An instrument used in measuring angles.
( K# ~  e5 |2 Q0 J- w" X4 N0 g角度计 - 用来测量角度的设备。
Gradient, Resistivity (not preferred; see resistivity variation)
9 K3 K; W8 i! I. @$ @" V电阻梯度 （不推荐使用，参见“电阻变化”）
! z- n& p# ^, gGroove - A scratch that was not completely polished out.
$ y+ Y! {$ t8 o凹槽 - 没有被完全清除的擦伤。
Hand Scribe Mark - A marking that is hand scratched onto the back surface of a wafer for identification purposes.
手工印记 - 为区分不同的晶圆片而手工在背面做出的标记。
Haze - A mass concentration of surface imperfections, often giving a hazy appearance to the wafer.
雾度 - 晶圆片表面大量的缺陷，常常表现为晶圆片表面呈雾状。
Hole - Similar to a positive charge, this is caused by the absence of a valence electron.
6 K% P! H, k  U$ `空穴 - 和正电荷类似，是由缺少价电子引起的。
硅片行业术语大全(中英文对照 I-Z)
; r1 h* l9 x* [/ G8 Y- f
0 e- x6 e6 }9 E' ]3 V& cIngot - A cylindrical solid made of polycrystalline or single crystal silicon from which wafers are cut.
  D/ }" Z: B% F- e2 H晶锭 - 由多晶或单晶形成的圆柱体，晶圆片由此切割而成。
: B/ J9 ^- m" Z, a+ ^3 S8 cLaser Light-Scattering Event - A signal pulse that locates surface imperfections on a wafer.
4 M4 w8 Z+ K5 \+ v/ s2 f激光散射 - 由晶圆片表面缺陷引起的脉冲信号。
& l- l. U1 y4 a8 f% bLay - The main direction of surface texture on a wafer.
层 - 晶圆片表面结构的主要方向。
Light Point Defect (LPD) (Not preferred; see localized light-scatterer)
光点缺陷(LPD) （不推荐使用，参见“局部光散射”）
2 ?# Y+ @9 e1 u3 U8 c: uLithography - The process used to transfer patterns onto wafers.
光刻 - 从掩膜到圆片转移的过程。
1 x* J3 U. U* yLocalized Light-Scatterer - One feature on the surface of a wafer, such as a pit or a scratch that scatters light. It is also called a light point defect.
3 ~8 M6 \5 Q" E& K) ~# u$ h局部光散射 - 晶圆片表面特征，例如小坑或擦伤导致光线散射，也称为光点缺陷。
; s8 p, B+ Y: {  J2 nLot - Wafers of similar sizes and characteristics placed together in a shipment.
- \7 P% s( a2 _5 I4 t批次 - 具有相似尺寸和特性的晶圆片一并放置在一个载片器内。
& X& j! a* b. R) f3 p6 d  \+ |7 fMajority Carrier - A carrier, either a hole or an electron that is dominant in a specific region, such as electrons in an N-Type area.
8 V" G. ?  v, L4 J7 _& w多数载流子 - 一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
Mechanical Test Wafer - A silicon wafer used for testing purposes.
1 u) `7 N; G/ {2 B  ~* g机械测试晶圆片 - 用于测试的晶圆片。
6 q7 O' s, n# @; s! z6 mMicroroughness - Surface roughness with spacing between the impurities with a measurement of less than 100 μm.
微粗糙 - 小于100微米的表面粗糙部分。
Miller Indices, of a Crystallographic Plane - A system that utilizes three numbers to identify plan orientation in a crystal.
! A* w- L0 X* PMiller索指数 - 三个整数，用于确定某个并行面。这些整数是来自相同系统的基本向量。
( @" ^# t9 m) m: E7 vMinimal Conditions or Dimensions - The allowable conditions for determining whether or not a wafer is considered acceptable.
8 }# ^* P8 d  R) u最小条件或方向 - 确定晶圆片是否合格的允许条件。
. D8 H7 N4 j# h% I* V* D6 YMinority Carrier - A carrier, either a hole or an electron that is not dominant in a specific region, such as electrons in a P-Type area.
少数载流子 - 在半导体材料中不起支配作用的移动电荷，在P型中是电子，在N型中是空穴。
+ Z* V2 z8 p  bMound - A raised defect on the surface of a wafer measuring more than 0.25 mm.
堆垛 - 晶圆片表面超过0.25毫米的缺陷。
Notch - An indent on the edge of a wafer used for orientation purposes.
5 ~# \$ ~9 |% V0 q, Z凹槽 - 晶圆片边缘上用于晶向定位的小凹槽。
Orange Peel - A roughened surface that is visible to the unaided eye.
5 Q0 S. C( Q% j桔皮 - 可以用肉眼看到的粗糙表面
7 z: M" H3 Q% \1 i+ ?. Q" |Orthogonal Misorientation -
8 x7 G0 p8 f; k7 e5 {直角定向误差 -
Particle - A small piece of material found on a wafer that is not connected with it.
颗粒 - 晶圆片上的细小物质。
Particle Counting - Wafers that are used to test tools for particle contamination.
$ e* n' ~. O9 {1 `2 E3 k0 `颗粒计算 - 用来测试晶圆片颗粒污染的测试工具。
Particulate Contamination - Particles found on the surface of a wafer. They appear as bright points when a collineated light is shined on the wafer.
% E$ X6 B2 c7 b9 C# h颗粒污染 - 晶圆片表面的颗粒。
* d4 s6 X4 l; H2 SPit - A non-removable imperfection found on the surface of a wafer.
+ V3 ]1 k/ t1 t( [2 u% M# l( ~深坑 - 一种晶圆片表面无法消除的缺陷。
* R" y) P% q, x/ L. W) \. DPoint Defect - A crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom.
点缺陷 - 不纯净的晶缺陷，例如格子空缺或原子空隙。
Preferential Etch -
优先蚀刻 -
Premium Wafer - A wafer that can be used for particle counting, measuring pattern resolution in the photolithography process, and metal contamination monitoring. This wafer has very strict specifications for a specific usage, but looser specifications than the prime wafer.
: D) W  A2 R: G3 v9 e! q测试晶圆片 - 影印过程中用于颗粒计算、测量溶解度和检测金属污染的晶圆片。对于具体应用该晶圆片有严格的要求，但是要比主晶圆片要求宽松些。
  r) w: X/ Q+ _# dPrimary Orientation Flat - The longest flat found on the wafer.
, B) X5 K7 |. P6 j主定位边 - 晶圆片上最长的定位边。
. l. I2 e9 _4 hProcess Test Wafer - A wafer that can be used for processes as well as area cleanliness.
加工测试晶圆片 - 用于区域清洁过程中的晶圆片。
* o, ]% l% ]# a7 e4 `Profilometer - A tool that is used for measuring surface topography.
表面形貌剂 - 一种用来测量晶圆片表面形貌的工具。
Resistivity (Electrical) - The amount of difficulty that charged carriers have in moving throughout material.
; X" l* F* q+ m8 R电阻率（电学方面） - 材料反抗或对抗电荷在其中通过的一种物理特性。
Required - The minimum specifications needed by the customer when ordering wafers.
- N, P' f+ p* g1 L必需 - 订购晶圆片时客户必须达到的最小规格。
8 j) |7 N7 }* T- I% I' URoughness - The texture found on the surface of the wafer that is spaced very closely together.
! ~$ a# T' r9 a. W( u8 |粗糙度 - 晶圆片表面间隙很小的纹理。
8 ^3 b- F- N! |! c3 F3 u' {Saw Marks - Surface irregularities
锯痕 - 表面不规则。
Scan Direction - In the flatness calculation, the direction of the subsites.
3 s5 A3 [7 R! {  Y7 M扫描方向 - 平整度测量中，局部平面的方向。
7 N" K% j  Z* H9 V+ p3 ^Scanner Site Flatness -
局部平整度扫描仪 -
Scratch - A mark that is found on the wafer surface.
擦伤 - 晶圆片表面的痕迹。
' D& ]% s* H3 K# x5 pSecondary Flat - A flat that is smaller than the primary orientation flat. The position of this flat determines what type the wafer is, and also the orientation of the wafer.
第二定位边 - 比主定位边小的定位边，它的位置决定了晶圆片的类型和晶向。
9 T7 f7 \  u" j/ e7 tShape -
- j; n% K5 U# r形状 -
Site - An area on the front surface of the wafer that has sides parallel and perpendicular to the primary orientation flat. (This area is rectangular in shape)
6 }; h7 h# D2 X7 e) G) d7 C8 I局部表面 - 晶圆片前面上平行或垂直于主定位边方向的区域。
Site Array - a neighboring set of sites
局部表面系列 - 一系列的相关局部表面。
& B$ E% P/ N- b' d' wSite Flatness -
局部平整 -
Slip - A defect pattern of small ridges found on the surface of the wafer.
划伤 - 晶圆片表面上的小皱造成的缺陷。
Smudge - A defect or contamination found on the wafer caused by fingerprints.
污迹 - 晶圆片上指纹造成的缺陷或污染。
+ R6 c6 m% F" OSori -
Striation - Defects or contaminations found in the shape of a helix.
; P: P5 c9 x5 t' O. X" D条痕 - 螺纹上的缺陷或污染。
Subsite, of a Site - An area found within the site, also rectangular. The center of the subsite must be located within the original site.
局部子表面 - 局部表面内的区域，也是矩形的。子站中心必须位于原始站点内部。
Surface Texture - Variations found on the real surface of the wafer that deviate from the reference surface.
表面纹理 - 晶圆片实际面与参考面的差异情况。
Test Wafer - A silicon wafer that is used in manufacturing for monitoring and testing purposes.
测试晶圆片 - 用于生产中监测和测试的晶圆片。
Thickness of Top Silicon Film - The distance found between the face of the top silicon film and the surface of the oxide layer.
顶部硅膜厚度 - 顶部硅层表面和氧化层表面间的距离。
Top Silicon Film - The layer of silicon on which semiconductor devices are placed. This is located on top of the insulating layer.
# o( g  R; B  h  q, Q1 s: R( r顶部硅膜 - 生产半导体电路的硅层，位于绝缘层顶部。
. F# D) E( \: }6 f) U$ r+ xTotal Indicator Reading (TIR) - The smallest distance between planes on the surface of the wafer.
' F6 g* r; Q1 D# F0 g总计指示剂数(TIR) - 晶圆片表面位面间的最短距离。
, S* Q4 X3 I+ g# @) G1 A% K/ X, yVirgin Test Wafer - A wafer that has not been used in manufacturing or other processes.
原始测试晶圆片 - 还没有用于生产或其他流程中的晶圆片。
Void - The lack of any sort of bond (particularly a chemical bond) at the site of bonding.
* w0 D! @% `- A* p: v' k" K4 L% U无效 - 在应该绑定的地方没有绑定（特别是化学绑定）。
- T6 G6 E  l: d1 i* tWaves - Curves and contours found on the surface of the wafer that can be seen by the naked eye.
& C9 ^1 M: ?8 ?. `波浪 - 晶圆片表面通过肉眼能发现的弯曲和曲线。
Waviness - Widely spaced imperfections on the surface of a wafer.
( I) b* H  r% b! i' m; S波纹 - 晶圆片表面经常出现的缺陷。