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[书籍] 《Chemical vapour deposition of coatings》英文原版

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发表于 2008-12-23 16:01:15 | 显示全部楼层 |阅读模式 来自: 中国湖南娄底

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Contents
8 C+ u8 z6 o1 P7 v1. Definition .....................................................................................................................60! V& d5 F* Z3 M
2. Background .................................................................................................................60) s! m$ Y0 C) z; m0 D
2.1. Nanostructured materials .........................................................................................62
) S' W9 p* z; t5 S4 V" J% d2.2. Free standing shapes ..............................................................................................62
, B& E  k& ^6 C8 a- o2.3. Rapid prototyping ....................................................................................................63; s3 I: g- |& u
3. Advantages and disadvantages of CVD.......................................................................633 C+ F$ X/ q+ T& H* ~4 v* g
4. Thin film and coating applications.................................................................................64
! ]( [& V  `+ c3 b5 p1 a# X5. CVD system .................................................................................................................65
/ R0 ?- y. Z& c5.1. Chemical vapour precursor supply system ...............................................................66. L: U/ D* ?  |. n; T% _
5.2. CVD reactor .............................................................................................................672 S6 m4 b( S, s" K- S
5.3. The effluent gas handling system ..............................................................................67
4 G5 t1 b: F3 f" Z6. Process principles and deposition mechanism...............................................................70% @! ?5 s/ Q2 Z) H7 D% v5 d. `
7. Chemical precursors and reaction chemistry.................................................................70, h3 E* a3 j* _
8. Thermodynamics, kinetics and mass transport phenomena...........................................722 o: M: u! f0 R5 O
8.1. Thermodynamics ......................................................................................................   72: t2 H% F, i  O5 c) U
8.1.1. Reaction feasibility...................................................................................                 728 N: u" U% R, H  e* P4 K1 `. j
8.1.2. CVD phase diagram.................................................................................                 75$ j2 S! n7 u. H- t& j5 F- s7 p
8.2. Kinetics..................................................................................................................... 76
9 q( G: M- s$ m1 V; f' a8.3. Mass transport phenomena ...................................................................................... 79" R$ e5 N! q: D* p
8.3.1. Fluid dynamics.........................................................................................                79
$ u8 I* n$ x0 E) s1 d8.4. Mass transport control .............................................................................................   80
8 d) {! k( b( [) R. C, o9. CVD process parameters...............................................................................................80% F% G. ~2 T' v( n$ g0 H% z
9.1. Coating uniformity ...................................................................................................   81
8 j9 l7 f  ]6 A7 P9.2. Coating–substrate adhesion......................................................................................81
9 T7 v) r6 T7 g4 E5 b( k/ U+ v9.3. Uniformity of coating composition ..........................................................................      82
. I& {5 d3 b1 C  K! N' k10. Process monitoring and measurement of the CVD process ..........................................82
6 B$ b* N6 G" |) X) G10.1. Temperature .............................................................................................................881 C. h7 \- n, M( C  F5 C
10.2. Chemical species .......................................................................................................88
; u4 g8 t- j  e3 }7 D# t" Q10.3. Fluid flow .................................................................................................................    89- G7 f6 W, M% }. X) q
1. Process/microstructure/property relationships in CVD ....................................................89
$ ^+ t( r, b( B1 Z$ f5 m0 S11.1. Epitaxial growth .......................................................................................................90
- Z" {) o) U6 T% J! E7 e11.2. Polycrystalline growth ..............................................................................................90& ]6 c* P6 r! N. R
11.3. Whiskers ...................................................................................................................91
6 x, c0 k- g, W' [11.4. Amorphous...............................................................................................................91! i1 y: H$ t! {
12. Variants of CVD methods............................................................................................94
9 J" J9 u, ^8 e. J) H2 e12.1. Thermally activated chemical vapour deposition .....................................................94
* e2 {3 S# t7 j; Z# P4 J! h8 e12.1.1. Semiconductors, dielectric and metallic films for microelectronics,
  l- A1 Y' a7 W2 V( r* ?3 Toptoelectronics or energy conversion devices...........................................          965 Y6 l. \/ ]( o" R
2.1.2. Ceramic protective coatings ...................................................................100
8 K& }8 P" E# a2 @- ]% o1 a12.1.3. Diffusion coating....................................................................................103
. a! R1 s. U6 G# \, T( A1 u! ~8 ~12.1.4. Optical fibres ..........................................................................................104
) [' c% W) V: i& Z" f  I12.1.5. Ceramic monofilament fibres .................................................................105
1 K6 H* ~$ ~/ {9 I+ e9 S9 }; M1 R12.1.6. Fibre coating ..........................................................................................107" p5 O, x0 h; E0 g
12.2. Plasma enhanced chemical vapour deposition ..........................................110
+ Q$ L4 V/ x1 J# P1 }( g# h$ s: @# A12.2.1. Process principles ...................................................................................1107 I- Y, e5 t6 Z, J5 G$ W4 D
12.2.2. Disadvantages and advantages of PECVD............................................111
( ?: n6 [( y/ c) h12.2.3. Examples of applications .......................................................................114
$ l, K( c6 H/ ], ~  p12.3. Photo-assisted chemical vapour deposition ..............................................117
9 M$ e3 I! k! N) x12.3.1. Photo-thermal ........................................................................................118
: [5 g( u- l1 }. u7 R12.3.2. Photolytic ...............................................................................................118
5 e, `% Q! ^$ J12.3.3. Advantages.............................................................................................119
3 w/ y5 t2 Y; O  J4 t- d8 k12.3.4. Applications ...........................................................................................119, p- o0 h' \  I9 u  D/ V- _9 l4 ?+ f
12.4. Atomic layer epitaxy process..................................................................     121
) ?5 z4 ~- t4 D" k' a1 P2.5. Metalorganic chemical vapour deposition.....................................................122
$ k7 h+ |# `4 X  _% o1 E12.5.1. Definition ...............................................................................................122
0 _' {/ A- P  X+ x; P5 `) @' T12.5.2. Process characteristics and advantages ..................................................124
8 Q6 C5 m- o% B* I2 r12.5.3. Limitations .............................................................................................125
  L0 z" a8 j$ e! ]12.5.4. Applications ...........................................................................................125
+ O; q& w5 Q& ]6 a12.6. Pulsed injection metalorganic chemical vapour deposition ........................125# H! J& R8 q& n0 X+ V2 g3 o2 l) |; t
12.6.1. Problems associated with the MOCVD method, especially for the
4 K2 l* A5 s- [& ?$ rdeposition of multicomponent oxides or multilayers .............................                 125
! ~, `. ~; V1 ^' i2 p2.6.2. Solutions to the problems using single source and special precursor* C* Y. v* n! p" B, f) `
injection methods ...................................................................................           126
- ]4 q5 Z* b' F2.6.3. Pulsed injection MOCVD ......................................................................126
  d- E  d7 W- l+ u# f1 Y12.7. Aerosol assisted chemical vapour deposition .............................................1286 @1 _$ ^- K  W1 e& v
12.7.1. Pyrosol ...................................................................................................131
: E' B" E( a* u- R& `12.7.2. Electrostatic assisted vapour deposition.................................................133
3 F$ e/ S( f9 }  k8 E4 o12.8. Flame assisted chemical vapour deposition................................................140
4 a+ H+ I* A* f12.8.1. Flame-assisted vapour deposition ..........................................................142/ x: n" j8 Z' y4 M0 c/ A
12.8.2. Combustion chemical vapour deposition ...............................................143
  c. O( r6 \/ T+ }. p6 i12.9. Electrochemical vapour deposition............................................................1446 h! y1 j0 s- ~2 Q
12.9.1. Process principle.....................................................................................145
7 p( e3 l, d) \! @! X' l12.9.2. Kinetics and growth...............................................................................146
6 I! K) q' D3 X12.9.3. Comparison of CVD and EVD processes..............................................147
+ E$ w+ l2 N3 r9 [  U8 ]# {3 I12.9.4. Advantages.............................................................................................148
3 c2 g( r( d3 l! b; k12.9.5. Technological status...............................................................................148
% y8 E6 }8 e3 p8 _) g7 i* V12.9.6. Other variants ........................................................................................149: t9 }5 l% S3 R4 M# n0 h
12.10. Chemical vapour infiltration ..................................................................149
) w9 U1 ^1 m2 V0 J- c7 s12.10.1. Applications ...........................................................................................150
7 X8 n1 R- N  z5 p5 Y" q: b12.10.2. Methodology..........................................................................................151& a, Z" y: [/ `, o2 @! d) {9 D# H
12.10.3. Various CVI processes ...........................................................................153: z$ J6 N" r8 w) v+ X7 g
13.Comparison of various CVD methods.................................................................1567 c4 M& M3 {5 I/ y- Z
14.Comparison of CVD with other coating techniques ...........................................157. {; G: K/ ]' w$ d7 t' T; w
15. Conclusions and outlook ..................................................................................159
4 V, t' d& E( b- X3 {: e3 kAcknowledgements....................................................................................................160
" C9 \5 b6 M0 S6 k& sReferences ..............................................................................................................160

Chemical vapour deposition of coatings.rar

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